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| HiPerFASTTM IGBT with Diode Combi Pack IXGK 50N60AU1 VCES IC25 VCE(sat) tfi = = = = 600 V 75 A 2.7 V 275 ns Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 10 Clamped inductive load, L = 30 H TC = 25C Maximum Ratings 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-264 AA G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features W C C C l l l l Mounting torque (M4) 0.9/6 Nm/lb.in. 10 300 g C l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-264 AA High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications l l l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.5 250 15 100 2.7 V V A mA nA V BVCES VGE(th) ICES I GES VCE(sat) IC IC = 500 A, VGE = 0 V = 500 A, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages l VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V l l l Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density (c) 1997 IXYS All rights reserved 92821G (3/97) IXGK 50N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 35 S TO-264 AA Outline gfs Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 200 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, T J = 25C IC = IC90 , VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 V CES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 50 80 50 210 200 275 4.8 50 240 3 280 600 9.6 400 nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W 0.15 K/W Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.7 V IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 480 A/s VR = 360 V TJ = 125C IF = 1 A; -di/dt = 200 A/s; VR = 30 V TJ = 25C 19 175 35 33 50 A ns ns 0.75 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGK 50N60AU1 Fig. 1 Saturation Characteristics 80 T J = 25C Fig. 2 Output Characterstics 350 300 VGE = 15V 13V 11V 9V T J = 25C 70 60 50 40 30 20 10 0 VGE = 15V 13V 11V 9V 7V 5V IC - Amperes IC - Amperes 250 200 150 100 50 0 7V 5V 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 T J = 25C Fig. 4 Temperature Dependence of Output Saturation Voltage 1.5 1.4 IC = 80A VCE(sat) - Normalized 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 IC = 20A IC = 40A VCE - Volts 6 5 4 3 2 1 0 4 5 6 7 8 9 10 11 12 13 14 15 IC = 40A IC = 20A VGE - Volts TJ - Degrees C Fig. 5 Input Admittance 80 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 VGE(th) @ 250A 60 BV / VCE(sat) - Normalized 70 VCE = 100V 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 BVCES @ 3mA IC - Amperes 50 40 30 20 TJ = 25C 10 0 T J = 125C 0 1 2 3 4 5 6 7 8 9 10 VGE - Volts TJ - Degrees C (c) 1997 IXYS All rights reserved IXGK 50N60AU1 Fig.7 Gate Charge 15 12 IC = 40A VCE = 500V Fig.8 Turn-Off Safe Operating Area 100 10 IC - Amperes VGE - Volts 9 6 3 0 TJ = 125C 1 dV/dt < 3V/ns 0.1 0.01 0 50 100 150 200 250 0 100 200 300 400 500 600 700 Total Gate Charge - (nC) VCE - Volts Fig.9 4500 4000 Capacitance Curves Capacitance - pF 3500 3000 2500 2000 1500 1000 500 0 0 Cres Cies = IXGK 50N60AU1 Coes 5 10 15 20 25 VCE - Volts Fig.10 1 D=0.5 Transient Thermal Impedance ZthJC (K/W) 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGK 50N60AU1 (c) 1997 IXYS All rights reserved IXGK 50N60AU1 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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